Datasheet4U Logo Datasheet4U.com

BUK6D120-40E - N-channel MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Extended temperature range Tj = 175 °C.
  • Side wettable flanks for optical solder inspection.
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C).
  • Trench MOSFET technology.
  • AEC-Q101 qualified 3.

📥 Download Datasheet

📁 Similar Datasheet

  • BUK6207-30C - N-channel TrenchMOS intermediate level FET (NXP Semiconductors)
  • BUK6207-55C - N-Channel MOSFET (NXP Semiconductors)
  • BUK6208-40C - N-channel TrenchMOS intermediate level FET (NXP)
  • BUK6209-30C - N-channel TrenchMOS intermediate level FET (NXP)
  • BUK6210-55C - N-Channel MOSFET (NXP Semiconductors)
  • BUK6211-75C - N-channel TrenchMOS FET (NXP Semiconductors)
  • BUK6212-40C - N-channel TrenchMOS intermediate level FET (NXP)
  • BUK6213-30A - N-Channel MOSFET (NXP Semiconductors)
  • BUK6213-30C - N-Channel MOSFET (NXP Semiconductors)
  • BUK6215-75C - N-channel TrenchMOS FET (NXP Semiconductors)
Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
BUK6D120-40E 40 V, N-channel Trench MOSFET 29 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Extended temperature range Tj = 175 °C • Side wettable flanks for optical solder inspection • ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C) • Trench MOSFET technology • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.
Published: |