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BUK7675-55A - N-channel MOSFET

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

2.

Features

  • AEC Q101 compliant.
  • Low conduction losses due to low on-state resistance.
  • Suitable for standard level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 3.

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Full PDF Text Transcription

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BUK7675-55A N-channel TrenchMOS standard level FET 25 August 2014 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • AEC Q101 compliant • Low conduction losses due to low on-state resistance • Suitable for standard level gate drive sources • Suitable for thermally demanding environments due to 175 °C rating 3. Applications • 12 V and 24 V loads • Automotive and general purpose power switching • Motors, lamps and solenoids 4. Quick reference data Table 1.
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