BUK9606-55B Datasheet - nexperia

N-channel TrenchMOS FET

* Low conduction losses due to low on-state resistance

* Q101 compliant

* Suitable for logic level gate drive sources

* Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications

* 12 V and 24 V loads

* Automotive systems

BUK9606-55B

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N-channel trenchmos fet.

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BUK9606-55B N-channel TrenchMOS FET nexperia

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