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BUK9606-55B - (BUK9x06-55B) N-channel TrenchMOSTM logic level FET

Download the BUK9606-55B datasheet PDF. This datasheet also covers the BUK9506-55B variant, as both devices belong to the same (buk9x06-55b) n-channel trenchmostm logic level fet family and are provided as variant models within a single manufacturer datasheet.

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low on-state resistance.

Key Features

  • s TrenchMOS™ technology s 175 °C rated s Q101 compliant s Logic level compatible. 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BUK9506-55B_PhilipsSemiconductors.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com BUK95/96/9E06-55B N-channel TrenchMOS™ logic level FET Rev. 03 — 30 November 2004 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low on-state resistance. 1.2 Features s TrenchMOS™ technology s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 679 mJ s ID ≤ 75 A s RDSon = 5.1 mΩ (typ) s Ptot ≤ 258 W. 2.