BUK9606-55B Description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
BUK9606-55B Key Features
- Low conduction losses due to low on-state resistance
- Q101 pliant
- Suitable for logic level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating