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BUK9606-55A - TrenchMOS logic level FET

Download the BUK9606-55A datasheet PDF. This datasheet also covers the BUK9E06-55A variant, as both devices belong to the same trenchmos logic level fet family and are provided as variant models within a single manufacturer datasheet.

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

Product availability: BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK); BUK9E06-55A in SOT226 (I2-PAK).

2.

Key Features

  • s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BUK9E06-55A_NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by NXP Semiconductors

Part Number Description
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BUK9610-55A N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com BUK9506-55A; BUK9606-55A; BUK9E06-55A TrenchMOS™ logic level FET Rev. 03 — 23 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK); BUK9E06-55A in SOT226 (I2-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications c c s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids. 4.