BUK9Y19-55B Description
Logic level N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
BUK9Y19-55B Key Features
- 175 °C rated
- Q101 pliant
- Logic level patible
- Very low on-state resistance