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MJD32CA - 3A PNP high power bipolar transistor

Description

PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.

2.

Features

  • High thermal power dissipation capability.
  • High energy efficiency due to less heat generation.
  • Electrically similar to popular MJD32 series.
  • Low collector emitter saturation voltage.
  • Fast switching speeds.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number MJD32CA
Manufacturer nexperia
File Size 225.62 KB
Description 3A PNP high power bipolar transistor
Datasheet download datasheet MJD32CA Datasheet
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Full PDF Text Transcription

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MJD32CA 100 V, 3 A PNP high power bipolar transistor 23 November 2020 Product data sheet 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD32 series • Low collector emitter saturation voltage • Fast switching speeds • AEC-Q101 qualified 3. Applications • Power management • Load switch • Linear mode voltage regulator • Constant current drive backlighting application • Motor drive • Relay replacement 4. Quick reference data Table 1.
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