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MJD44H11A - 8A NPN high power bipolar transistor

General Description

NPN high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • High thermal power dissipation capability.
  • High energy efficiency due to less heat generation.
  • Electrically similar to popular MJD44H series.
  • Low collector emitter saturation voltage.
  • Fast switching speeds.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number MJD44H11A
Manufacturer Nexperia
File Size 230.34 KB
Description 8A NPN high power bipolar transistor
Datasheet download datasheet MJD44H11A Datasheet

Full PDF Text Transcription for MJD44H11A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MJD44H11A. For precise diagrams, and layout, please refer to the original PDF.

MJD44H11A 80 V, 8 A NPN high power bipolar transistor 28 May 2019 Preliminary data sheet 1. General description NPN high power bipolar transistor in a power SOT428 Surfac...

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description NPN high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11A 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD44H series • Low collector emitter saturation voltage • Fast switching speeds • AEC-Q101 qualified 3. Applications • Power management • Load switch • Linear mode voltage regulator • Constant current drive backlighting application • Motor drive • Relay replacement 4. Quick reference data Table 1.