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MJD45H11A - 8A PNP high power bipolar transistor

General Description

PNP high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • High thermal power dissipation capability.
  • High energy efficiency due to less heat generation.
  • Electrically similar to popular MJD45H series.
  • Low collector emitter saturation voltage.
  • Fast switching speeds.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number MJD45H11A
Manufacturer Nexperia
File Size 229.88 KB
Description 8A PNP high power bipolar transistor
Datasheet download datasheet MJD45H11A Datasheet

Full PDF Text Transcription for MJD45H11A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MJD45H11A. For precise diagrams, and layout, please refer to the original PDF.

MJD45H11A 80 V, 8 A PNP high power bipolar transistor 28 May 2019 Product data sheet 1. General description PNP high power bipolar transistor in a power SOT428 Surface-Mo...

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ription PNP high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11A 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD45H series • Low collector emitter saturation voltage • Fast switching speeds • AEC-Q101 qualified 3. Applications • Power management • Load switch • Linear mode voltage regulator • Constant current drive backlighting application • Motor drive • Relay replacement 4. Quick reference data Table 1.