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MJD45H11 - Silicon PNP Power Transistor

General Description

Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A Fast Switching Speeds Complement to Type MJD44H11 DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for gen

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isc Silicon PNP Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD44H11 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general pourpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and power amplifier.