Datasheet Details
| Part number | MJD45H11 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 243.16 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | MJD45H11-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistors.
| Part number | MJD45H11 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 243.16 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | MJD45H11-InchangeSemiconductor.pdf |
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·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD44H11 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general pourpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak Collector Power Dissipation PC @TC=25℃ Collector Power Dissipation @Ta=25℃ Tj Junction Temperature -16 A 20 W 1.75 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 6.25 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W MJD45H11 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors MJD45H11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA;
IB= 0 -80 V VCE(sat) Collector-EmitterSaturation Voltage IC= -8A ;IB= -0.4 A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -8A ;IB= -0.8 A -1.5 V ICES Collector Cutoff Current VCE=Rated VCEO;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJD45H11 | Complementary Power Transistors | Kexin |
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MJD45H11 | PNP Epitaxial Silicon Transistor | Fairchild |
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MJD45H11 | Complementary power transistors | ST Microelectronics |
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MJD45H11 | SILICON POWER TRANSISTORS | Motorola |
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MJD45H11 | 8A PNP high power bipolar transistor | nexperia |
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