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MJD45H11 - 8A PNP high power bipolar transistor

General Description

PNP high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • High thermal power dissipation capability.
  • High energy efficiency due to less heat generation.
  • Electrically similar to popular MJD45H series.
  • Low collector emitter saturation voltage.
  • Fast switching speeds 3.

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Datasheet Details

Part number MJD45H11
Manufacturer Nexperia
File Size 229.87 KB
Description 8A PNP high power bipolar transistor
Datasheet download datasheet MJD45H11 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJD45H11 80 V, 8 A PNP high power bipolar transistor 28 May 2019 Preliminary data sheet 1. General description PNP high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD45H series • Low collector emitter saturation voltage • Fast switching speeds 3. Applications • Power management • Load switch • Linear mode voltage regulator • Constant current drive backlighting application • Motor drive • Relay replacement 4. Quick reference data Table 1.