• Part: MJD45H11G
  • Description: Complementary Power Transistors
  • Category: Transistor
  • Manufacturer: onsemi
  • Size: 290.10 KB
Download MJD45H11G Datasheet PDF
onsemi
MJD45H11G
MJD45H11G is Complementary Power Transistors manufactured by onsemi.
- Part of the MJD44H11 comparator family.
Features - Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) - Straight Lead Version in Plastic Sleeves (“- 1” Suffix) - Electrically Similar to Popular D44H/D45H Series - Low Collector Emitter Saturation Voltage - Fast Switching Speeds - plementary Pairs Simplifies Designs - Epoxy Meets UL 94 V- 0 @ 0.125 in - NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant MAXIMUM RATINGS (TA = 25_C, mon for NPN and PNP, minus sign, “- ”, for PNP omitted, unless otherwise noted) Rating Collector- Emitter Voltage Emitter- Base Voltage Collector Current - Continuous Collector Current - Peak Total Power Dissipation @ TC = 25°C Derate above 25°C Symbol VCEO VEB IC ICM PD Max 80 5 8 16 20 0.16 Unit Vdc Vdc Adc Adc W W/°C Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD TJ, Tstg 1.75 0.014 - 55 to +150 W W/°C °C - Human Body Model 3B - Machine...