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NSF040120L4A0 - N-channel SiC MOSFET

General Description

The NSF040120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology.

Key Features

  • Excellent RDSon temperature stability.
  • Very low switching losses.
  • Fast reverse recovery.
  • Fast switching speed.
  • Temperature independent turn-off switching losses.
  • Very fast and robust intrinsic body diode.
  • Faster commutation and improved switching due to the additional Kelvin source pin 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NSF040120L4A0 1200 V, 40 mΩ, N-channel SiC MOSFET 2 February 2024 Product data sheet 1. General description The NSF040120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives. 2.