PBHV8560Z Description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PBHV8560Z Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability
- High collector current gain hFE at high IC
- AEC-Q101 qualified
PBHV8560Z Applications
- Electronic ballast for fluorescent lighting
- LED driver for LED chain module