Datasheet4U Logo Datasheet4U.com

PBRP113ET - PNP RET

General Description

800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBRN113ET.

Key Features

  • I 800 mA repetitive peak output current I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PBRP113ZT PNP 800 mA NXP Semiconductors
PBRP123ET PNP 800 mA NXP Semiconductors
PBRP123YT PNP 800 MA NXP
PBR941 UHF wideband transistor NXP
PBR941B UHF wideband transistor NXP

Other Datasheets by Nexperia

Part Number Description
PBRN113E NPN RET
PBRN113EK NPN RET
PBRN113ES NPN RET
PBRN113ET NPN RET
PBRN113Z NPN RET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PBRP113ET PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 1 kΩ Rev. 01 — 17 December 2007 Product data sheet 1. Product profile 1.1 General description 800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN113ET. 1.2 Features I 800 mA repetitive peak output current I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3 Applications I Digital application in automotive and industrial segments I Medium current peripheral driver I Switching loads 1.4 Quick reference data Table 1.