PBRP113ZT Overview
.. 800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN plement: PBRN113ZT. 1.2
PBRP113ZT Applications
- = -: made in Hong Kong
- = p: made in Hong Kong
- = t: made in Malaysia
- = W: made in China
