PBRP113ZT Description
800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
PBRP113ZT Applications
- = -: made in Hong Kong
- = p: made in Hong Kong
- = t: made in Malaysia
- = W: made in China