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PBRP113ET Datasheet PNP RET

Manufacturer: Nexperia

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General Description

800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBRN113ET.

1.2

Overview

PBRP113ET PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 1 kΩ Rev.

01 — 17 December 2007 Product data sheet 1.

Product profile 1.

Key Features

  • I 800 mA repetitive peak output current I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3.

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