Datasheet Summary
PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 1 kΩ
Rev. 01
- 17 December 2007
Product data sheet
1. Product profile
1.1 General description
800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN plement: PBRN113ET.
1.2 Features
I 800 mA repetitive peak output current
I High current gain hFE I Built-in bias resistors I Simplifies circuit design
I Low collector-emitter saturation voltage VCEsat
I Reduces ponent count I Reduces pick and place costs I ±10 % resistor ratio tolerance
1.3 Applications
I Digital application in automotive and industrial segments
I...
