• Part: PBSS301NX
  • Manufacturer: Nexperia
  • Size: 173.84 KB
Download PBSS301NX Datasheet PDF
PBSS301NX datasheet preview
PBSS301NX page 2
Page 2
PBSS301NX page 3
Page 3

PBSS301NX Key Features

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Other PBSS301NX Datasheets

Manufacturer Part Number Description
NXP Logo NXP Semiconductors PBSS301ND 4A NPN transistor
NXP Logo NXP Semiconductors PBSS301PD PNP Transistor

PBSS301NX Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.