Datasheet Summary
..
20 V, 4 A NPN low VCEsat (BISS) transistor
Rev. 02
- 25 April 2005 Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. PNP plement: PBSS301PD.
1.2 Features s s s s s Very low collector-emitter saturation resistance Ultra low collector-emitter saturation voltage 4 A continuous collector current Up to 15 A peak current High efficiency due to less heat generation
1.3 Applications s s s s s s Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight...
