Datasheet Summary
12 V, 5.8 A NPN low VCEsat (BISS) transistor
Rev. 02
- 17 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
PNP plement: PBSS301PZ.
1.2 Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
- DC-to-DC conversion
- MOSFET gate driving
- Motor control
- Charging circuits
-...
