* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventio
PBSS305NX Datasheet (195.59 KB)
PBSS305NX
195.59 KB
4.6a npn transistor.
PBSS305NX 80 V, 4.6 A NPN low VCEsat (BISS) transistor Rev. 02 8 December 2009 Product data sheet 1. Product profile 1.1 General descript.
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