• Part: PBSS4041SPN
  • Manufacturer: Nexperia
  • Size: 817.91 KB
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PBSS4041SPN Key Features

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Other PBSS4041SPN Datasheets

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NXP Logo NXP Semiconductors PBSS4041SP 5.9A PNP/PNP Low V_CEsat (BISS) Transistor
NXP Logo NXP Semiconductors PBSS4041SN 6.7A NPN/NPN Low V_CEsat (BISS) Transistor
NXP Semiconductors Logo NXP Semiconductors PBSS4041NT 3.8A NPN low VCEsat (BISS) transistor
NXP Logo NXP Semiconductors PBSS4041NX 6.2 A NPN low VCEsat (BISS) transistor
NXP Logo NXP Semiconductors PBSS4041NZ 7 A NPN low VCEsat (BISS) transistor

PBSS4041SPN Description

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Product overview Type number Package Nexperia PBSS4041SPN SOT96-1 Name SO8 NPN/NPN plement PBSS4041SN PNP/PNP plement PBSS4041SP 1.2.