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PBSS4041SPN - NPN/PNP Transistor

Description

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

Table 1.

Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High efficiency due to less heat generation.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Datasheet Details

Part number PBSS4041SPN
Manufacturer nexperia
File Size 817.91 KB
Description NPN/PNP Transistor
Datasheet download datasheet PBSS4041SPN Datasheet
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Full PDF Text Transcription

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PBSS4041SPN 60 V NPN/PNP low VCEsat (BISS) transistor Rev. 2 — 20 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia PBSS4041SPN SOT96-1 Name SO8 NPN/NPN complement PBSS4041SN PNP/PNP complement PBSS4041SP 1.2 Features and benefits „ Very low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High efficiency due to less heat generation „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.
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