Datasheet Summary
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60 V, 6.2 A NPN low VCEsat (BISS) transistor
Rev. 01
- 1 April 2010 Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP plement: PBSS4041PX.
1.2 Features and benefits
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- - Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
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