Datasheet Summary
60 V, 5.7 A PNP low VCEsat (BISS) transistor
Rev. 01
- 31 March 2010
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
NPN plement: PBSS4041NZ.
1.2 Features and benefits
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
- Loadswitch
- Battery-driven...
