Datasheet Summary
DataSheet.in
60 V, 2.7 A PNP low VCEsat (BISS) transistor
Rev. 02
- 9 March 2010 Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN plement: PBSS4041NT.
1.2 Features and benefits
- -
- -
- - Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
- -
- -
- Loadswitch...
