Datasheet Summary
60 V, 6.2 A NPN low VCEsat transistor
17 January 2025
Product data sheet
1. General description
NPN low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
PNP plement: PBSS4041PX-Q
2. Features and benefits
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High energy efficiency due to less heat generation
- Qualified according to AEC-Q101 and remended for use in automotive applications
3. Applications
- Loadswitch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors,...
