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PBSS4041NX-Q - 60V 6.2A NPN low VCEsat transistor

General Description

NPN low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High energy efficiency due to less heat generation.
  • Qualified according to AEC-Q101 and recommended for use in automotive.

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Datasheet Details

Part number PBSS4041NX-Q
Manufacturer Nexperia
File Size 317.72 KB
Description 60V 6.2A NPN low VCEsat transistor
Datasheet download datasheet PBSS4041NX-Q Datasheet

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Full PDF Text Transcription (Reference)

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PBSS4041NX-Q 60 V, 6.2 A NPN low VCEsat transistor 17 January 2025 Product data sheet 1. General description NPN low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PX-Q 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • High energy efficiency due to less heat generation • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • Loadswitch • Battery-driven devices • Power management • Charging circuits • Power switches (e.g. motors, fans) 4. Quick reference data Table 1.