NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/NPN complement: PBSS4130PAN.
PNP/PNP complement: PBSS5130PAP.
Key Features
Very low collector-emitter saturation voltage VCEsat.
Full PDF Text Transcription for PBSS4130PANP (Reference)
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PBSS4130PANP. For precise diagrams, and layout, please refer to the original PDF.
PBSS4130PANP 30 V, 1 A NPN/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BI...
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eneral description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4130PAN. PNP/PNP complement: PBSS5130PAP. 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High efficiency due to less heat generation • AEC-Q101 qualified 3. Applications • Load switch • Battery-driven devices • Power management • Charging circuits •
PBSS4130PANP Datasheet
