Part PBSS4130T
Description NPN low VCEsat (BISS) transistor
Category Transistor
Manufacturer NXP Semiconductors
Size 70.61 KB
NXP Semiconductors

PBSS4130T Overview

Description

plastic surface mounted package; 3 leads MARKING CODE(1) *3C 1 Top view handbook, halfpage PBSS4130T QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 30 1 3 220 UNIT V A A mΩ 3 3 1 2 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol.

Key Features

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High efficiency leading to less heat generation
  • Reduced printed-circuit board requirements
  • Cost effective alternative to MOSFETs in specific applications. APPLICATIONS
  • Power management – DC/DC conversion – Supply line switching – Battery charger – LCD backlighting
  • * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China