Datasheet Summary
30 V, 1 A NPN low VCEsat transistor
8 July 2025
Product data sheet
1. General description
NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
PNP plement: PBSS5130QA-Q.
2. Features and benefits
- Very Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain hFE at high IC
- High energy efficiency due to less heat generation
- Reduced Printed-Circuit Board (PCB) area requirments
- Solderable side pads
- Qualified according to AEC-Q101 and remended for use in automotive applications
3. Applications
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