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PBSS4130QA-Q - 30V 1A NPN low VCEsat transistor

General Description

NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

PNP complement: PBSS5130QA-Q.

2.

Key Features

  • Very Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain hFE at high IC.
  • High energy efficiency due to less heat generation.
  • Reduced Printed-Circuit Board (PCB) area requirments.
  • Solderable side pads.
  • Qualified according to AEC-Q101 and recommended for use in automotive.

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Full PDF Text Transcription (Reference)

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PBSS4130QA-Q 30 V, 1 A NPN low VCEsat transistor 8 July 2025 Product data sheet 1. General description NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5130QA-Q. 2. Features and benefits • Very Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • High energy efficiency due to less heat generation • Reduced Printed-Circuit Board (PCB) area requirments • Solderable side pads • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • Loadswitch • Battery-driven devices • Power management • Charging circuits • Power switches (e.g.