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PBSS4130PANP - 1A NPN/PNP low VCEsat (BISS) transistor

General Description

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/NPN complement: PBSS4130PAN.

PNP/PNP complement: PBSS5130PAP.

Key Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain hFE at high IC.
  • Reduced Printed-Circuit Board (PCB) requirements.
  • High efficiency due to less heat generation.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number PBSS4130PANP
Manufacturer Nexperia
File Size 828.93 KB
Description 1A NPN/PNP low VCEsat (BISS) transistor
Datasheet download datasheet PBSS4130PANP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS4130PANP 30 V, 1 A NPN/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4130PAN. PNP/PNP complement: PBSS5130PAP. 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High efficiency due to less heat generation • AEC-Q101 qualified 3. Applications • Load switch • Battery-driven devices • Power management • Charging circuits • Power switches (e.g. motors, fans) 4.