PBSS4220PANS transistor equivalent, npn/npn transistor.
* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* Reduc.
* Load switch
* Battery-driven devices
* Power management
* Charging circuits
* LED lighting
* P.
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
PNP/PNP complement: PBSS5220PAPS
2. Feature.
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