Datasheet4U Logo Datasheet4U.com

PBSS4230PAN Datasheet 2a NPN/npn Low Vcesat (biss) Transistor

Manufacturer: Nexperia

Overview: PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 14 December 2012 Product data sheet 1.

General Description

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4230PANP.

PNP/PNP complement: PBSS5230PAP.

Key Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain hFE at high IC.
  • Reduced Printed-Circuit Board (PCB) requirements.
  • High efficiency due to less heat generation.
  • AEC-Q101 qualified 3.

PBSS4230PAN Distributor