• Part: PBSS4230QA
  • Manufacturer: Nexperia
  • Size: 718.28 KB
Download PBSS4230QA Datasheet PDF
PBSS4230QA datasheet preview
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PBSS4230QA Key Features

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • High energy efficiency due to less heat generation
  • Reduced Printed-Circuit Board (PCB) area requirements
  • Solderable side pads
  • AEC-Q101 qualified

Other PBSS4230QA Datasheets

Manufacturer Part Number Description
NXP Logo NXP Semiconductors PBSS4230PAN NPN/NPN low VCEsat (BISS) transistor
NXP Logo NXP Semiconductors PBSS4230PANP NPN/PNP low VCEsat (BISS) transistor
NXP Logo NXP Semiconductors PBSS4230T NPN low VCEsat (BISS) transistor

PBSS4230QA Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.