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PBSS4230QA Datasheet NPN transistor

Manufacturer: Nexperia

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General Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

PNP complement: PBSS5230QA.

2.

Overview

PBSS4230QA 30 V, 2 A NPN low VCEsat (BISS) transistor 23 August 2013 Product data sheet 1.

Key Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain hFE at high IC.
  • High energy efficiency due to less heat generation.
  • Reduced Printed-Circuit Board (PCB) area requirements.
  • Solderable side pads.
  • AEC-Q101 qualified 3.

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