Datasheet4U Logo Datasheet4U.com

PBSS4360PAS Datasheet 3A NPN transistor

Manufacturer: Nexperia

📥 Download Datasheet

General Description

NPN low VCEsat Breakthrough in a Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.

PNP complement: PBSS5360PAS 2.

Overview

DFN2020D-3 PBSS4360PAS 60 V, 3 A NPN low VCEsat (BISS) transistor 16 October 2015 Product data sheet 1.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High efficiency due to less heat generation.
  • High temperature.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
NXP Logo PBSS4360Z 3A NPN low VCEsat (BISS) transistor NXP

More Datasheets from Nexperia

Part Number Description
PBSS4360X NPN transistor
PBSS4360X-Q 60V 3A NPN low VCEsat transistor
PBSS4360Z NPN transistor
PBSS4320X NPN transistor
PBSS4330PA 3A NPN transistor
PBSS4330PAS NPN transistor
PBSS4350SPN NPN/PNP transistor
PBSS4350SS NPN/NPN transistor
PBSS4350X-Q 50V 3A NPN low VCEsat transistor
PBSS4350Z 50V low VCEsat NPN transistor