PBSS4360PAS Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High efficiency due to less heat generation
- High temperature
- Part: PBSS4360PAS
- Manufacturer: Nexperia
- Size: 255.86 KB
Other PBSS4360PAS Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
NXP Semiconductors |
PBSS4360Z | 3A NPN low VCEsat (BISS) transistor |
PBSS4360PAS Description
NPN low VCEsat Breakthrough in a Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.