• Part: PBSS4360Z
  • Description: 3A NPN low VCEsat (BISS) transistor
  • Manufacturer: NXP Semiconductors
  • Size: 254.59 KB
Download PBSS4360Z Datasheet PDF
NXP Semiconductors
PBSS4360Z
PBSS4360Z is 3A NPN low VCEsat (BISS) transistor manufactured by NXP Semiconductors.
26 February 2014 SO T2 60 V, 3 A NPN low VCEsat (BISS) transistor Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP plement: PBSS5360Z. 2. Features and benefits - - - - Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications - - - - - - DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays,...