PBSS4360X-Q - 60V 3A NPN low VCEsat transistor

Nexperia

General Description

NPN low VCEsat transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.

Key Features

Low collector-emitter saturation voltage VCEsat.
High collector current capability IC and ICM.
High energy efficiency due to less heat generation.
Qualified according to AEC-Q101 and recommended for use in automotive.

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PBSS4360X-Q 60v 3a npn low vcesat transistor by Nexperia - Datasheet Preview

Datasheet Details

Part number	PBSS4360X-Q
Manufacturer	Nexperia
File Size	249.81 KB
Description	60V 3A NPN low VCEsat transistor
Datasheet	PBSS4360X-Q Datasheet

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PBSS4360X-Q 60 V, 3 A NPN low VCEsattransistor 16 January 2025 Product data sheet 1. General description NPN low VCEsat transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5360X-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High energy efficiency due to less heat generation • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • DC-to-DC conversion • Supply line switching • Battery charger • LCD backlighting • Driver in low supply voltage applications (e.g. lamps and LEDs) • Inductive load driver (e.g. relays, buzzers and motors) 4. Quick reference data Table 1.