Datasheet Details
| Part number | PBSS5112PAP |
|---|---|
| Manufacturer | Nexperia |
| File Size | 740.15 KB |
| Description | 1A PNP/PNP low VCEsat (BISS) transistor |
| Datasheet |
 PBSS5112PAP Datasheet
|
|
|
General Description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4112PANP.
NPN/NPN complement: PBSS4112PAN.
Key Features
- Very low collector-emitter saturation voltage VCEsat.
- High collector current capability IC and ICM.
- High collector current gain hFE at high IC.
- Reduced Printed-Circuit Board (PCB) requirements.
- High energy efficiency due to less heat generation.
- AEC-Q101 qualified 1.3.
