Part PBSS5112PAP
Description PNP/PNP low VCEsat (BISS) transistor
Category Transistor
Manufacturer NXP Semiconductors
Size 271.44 KB
NXP Semiconductors

PBSS5112PAP Overview

Key Features

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • Reduced Printed-Circuit Board (PCB) requirements
  • High energy efficiency due to less heat generation
  • AEC-Q101 qualified 1.3 Applications
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans) 1.4 Quick reference data Table