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PBSS5112PAP Datasheet 1a PNP/pnp Low Vcesat (biss) Transistor

Manufacturer: Nexperia

Overview: PBSS5112PAP 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor 30 November 2012 Product data sheet 1. Product profile 1.

General Description

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP plement: PBSS4112PANP.

NPN/NPN plement: PBSS4112PAN.

Key Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain hFE at high IC.
  • Reduced Printed-Circuit Board (PCB) requirements.
  • High energy efficiency due to less heat generation.
  • AEC-Q101 qualified 1.3.

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