| Part Number | PBSS5112PAP Datasheet |
|---|---|
| Manufacturer | NXP Semiconductors |
| Overview |
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. NPN/NPN.
and benefits * Very low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain hFE at high IC * Reduced Printed-Circuit Board (PCB) requirements * High energy efficiency due to less heat generation * AEC-Q101 qualified 1.3 Application. |
PBSS5112PAP Datasheet and Specifications PDF
The PBSS5112PAP is a PNP/PNP low VCEsat (BISS) transistor.
Key Specifications
| Package | DFN |
|---|---|
| Mount Type | Surface Mount |
| Pins | 6 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | PBSS5112PAP Datasheet |
|---|---|
| Description | 1A PNP/PNP low VCEsat (BISS) transistor |
| Manufacturer | Nexperia |
| Overview |
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. NPN/NPN.
and benefits
* Very low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain hFE at high IC * Reduced Printed-Circuit Board (PCB) requirements * High energy efficiency due to less heat generation * AEC-Q101 qualified 1.3 Applicatio. |