PDTC123EMB transistor equivalent, npn resistor-equipped transistor.
* 100 mA output current capability
* Reduces component count
* Built-in bias resistors
* Reduces pick and place costs
* Simplifies circuit design
* Low-current peripheral driver
* Control of IC inputs
* Replaces general-purpose transistors in digital ap.
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
PNP complement: PDTA123EMB.
1.2 Features and benefits
* 100 mA output current capability
* Reduces component .
Image gallery