PDTC123JEF Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor Preliminary specification 1999 May 27 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor Features - Built-in bias resistors R1 and R2 (typ. 2.2 kΩ and 47 kΩ respectively) - Simplification of circuit design - Reduces number of ponents and board space. 1 2 MAM412 PDTC123JEF handbook, halfpage 3 R1 1 R2 APPLICATIONS - Especially suitable for space reduction in interface and driver circuits - Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in an SC-89 (SOT490) plastic package. PINNING MGA893 -...