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PHB29N08T - N-channel MOSFET

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features

  • High noise immunity due to high gate threshold voltage.
  • Low conduction losses due to low on-state resistance 1.3.

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Full PDF Text Transcription

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PHB29N08T N-channel TrenchMOS standard level FET Rev. 03 — 13 October 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ High noise immunity due to high gate threshold voltage „ Low conduction losses due to low on-state resistance 1.3 Applications „ Industrial motor control 1.4 Quick reference data Table 1.
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