Datasheet4U Logo Datasheet4U.com

PHB29N08T - TrenchMOS standard level FET

General Description

N-channel standard level field-effect power transistor in a plastic package using TrenchMOS™ technology.

Product availability: PHP29N08T in SOT78 (TO-220AB) PHB29N08T in SOT404 (D2-PAK).

2.

Key Features

  • s High noise immunity s Low on-state resistance. 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PHB29N08T N-channel MOSFET nexperia
PHB20N06T N-channel MOSFET nexperia
PHB222NQ04LT N-channel TrenchMOSTM logic level FET NXP Semiconductors
PHB225NQ04T N-channel TrenchMOS standard level FET NXP Semiconductors
PHB27NQ10T N-channel MOSFET nexperia

Other Datasheets by NXP Semiconductors

Part Number Description
PHB20N06T N-channel TrenchMOS standard level FET
PHB20NQ20T N-channel TrenchMOS standard level FET
PHB21N06LT N-channel TrenchMOS transistor Logic level FET
PHB21N06T TrenchMOS transistor Standard level FET
PHB23NQ10LT N-channel TrenchMOS logic levelFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PHP/PHB29N08T TrenchMOS™ standard level FET Rev. 01 — 29 May 2002 Product data 1. Description N-channel standard level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP29N08T in SOT78 (TO-220AB) PHB29N08T in SOT404 (D2-PAK). 2. Features s High noise immunity s Low on-state resistance. 3. Applications s Industrial motor control. 4. Pinning information Table 1: Pinning - SOT78, SOT404 simplified outline and symbol Simplified outline mb mb Pin Description 1 2 3 mb gate (g) Symbol d drain (d) source (s) mounting base, connected to drain (d) [1] g s MBB076 2 1 MBK106 3 MBK116 1 2 3 SOT78 (TO-220AB) [1] It is not possible to make connection to pin 2 of the SOT404 package. SOT404 (D2-PAK) www.DataSheet4U.