PHB29N08T Datasheet | NXP Semiconductors

Description N-channel standard level field-effect power transistor in a plastic package using Trench MOS™ technology. Product availability: PHP29N08T in SOT78 (TO-220AB) PHB29N08T in SOT404 (D2-PAK). 2. Features s High noise immunity s Low on-state resistance. 3. Applications s Industrial motor control. 4. Pinning information Table 1: Pinning - SOT78, SOT404 simplified outline and symbol Simplified outline mb mb Pin Description 1 2 3 mb gate (g) Symbol d drain (d) source (s) mounting base, connected to drain (d) [1] g s MBB076 2 1 MBK106 MBK116 1 2 3 SOT78 (TO-220AB) [1] It is not possible to make connection to pin 2 of the SOT404 package. SOT404 (D2-PAK) .. Philips Semiconductors PHP/PHB29N08T Trench MOS™ standard level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 11 V Tmb = 25 °C VGS = 11 V; ID = 14 A Tj = 25 °C Tj = 175 °C 40 96 50 120 mΩ mΩ Typ Max 75 27 88 175 Unit V A W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs Tmb = 25 °C; VGS = 11 V; Figure 2 and 3 Tmb = 100 °C; VGS = 11 V; Figure 2 Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Conditions 25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ Min - 55 - 55 Max 75 75 ±30 27 19.2 108 88 +175 +175 27 108 Unit V V V A A A W °C °C A A Source-drain diode 9397 750 09651 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product...