PHB29N08T Datasheet | Nexperia

description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only. 1.2 Features and benefits - High noise immunity due to high gate threshold voltage - Low conduction losses due to low on-state resistance 1.3 Applications - Industrial motor control 1.4 Quick reference data Table 1. Quick reference Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 11 V; see Figure 1 and 3 Min Typ Max Unit - - 75 V - - 27 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 88 W Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 29 A; VDS = 60 V; Tj = 25 °C; see Figure 11 - 9 - n C Static characteristics RDSon drain-source on-state resistance VGS = 11 V; ID = 14 A; Tj = 175 °C; see Figure 9 and 10 VGS = 11 V; ID = 14 A; Tj = 25 °C; see Figure 9 and 10 - 96 120 mΩ 40 50 mΩ Nexperia N-channel Trench MOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1G gate 2D drain 3S source mb D mounting base, connected to drain [1] It is not possible to make connection to pin 2. Simplified...