PHB33NQ20T Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only.
PHB33NQ20T Key Features
- Higher operating power due to low thermal resistance
- Low conduction losses due to low on-state resistance
- Simple gate drive required due to low gate charge
- Suitable for high frequency