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PMCPB5530X - N/P-channel MOSFET

Description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Very fast switching.
  • Trench MOSFET technology.
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm.
  • Exposed drain pad for excellent thermal conduction 1.3.

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Full PDF Text Transcription

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PMCPB5530X 20 V, complementary Trench MOSFET Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm  Exposed drain pad for excellent thermal conduction 1.3 Applications  Charging switch for portable devices  DC-to-DC converters  Small brushless DC motor drive  Power management in battery-driven portables  Hard disc and computing power management 1.4 Quick reference data Table 1.
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