Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Key Features
Very fast switching.
Trench MOSFET technology.
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm.
Exposed drain pad for excellent thermal conduction
1.3.
Full PDF Text Transcription for PMDPB55XP (Reference)
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PMDPB55XP. For precise diagrams, and layout, please refer to the original PDF.
PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 3 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effe...
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ile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction 1.3 Applications Charging switch for portable devices DC/DC converters Small brushless DC motor drive Power management in battery-driven portables Hard disc and computing power management 1.4 Quick ref
PMDPB55XP Datasheet
