PMDPB55XP Datasheet | NXP Semiconductors

description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. N2 1.2 Features and benefits - Very fast switching - Trench MOSFET technology - Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm - Exposed drain pad for excellent thermal conduction 1.3 Applications - Charging switch for portable devices - DC/DC converters - Small brushless DC motor drive - Power management in battery-driven portables - Hard disc and puting power management 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; ID = -3.4 A; Tj = 25 °C [1] Quick reference data Parameter Conditions Tj = 25 °C Min -12 Typ 55 Max -20 12 -4.5 70 Unit V V A mΩ Static characteristics (per transistor) [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. NXP Semiconductors 20 V, dual P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description S1 G1 D2 S2 G2 D1 D1 D2 source TR1 gate TR1 drain TR2 source TR2 gate TR2 drain TR1 drain TR1 drain TR2 1 2 3 G1 S1 S2 G2 017aaa258 Simplified outline 6 5 4 Graphic symbol D1 D2 Transparent top view SOT1118 (DFN2020-6) 3. Ordering...